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Teraoka, Yuden; Yoshigoe, Akitaka; Moritani, Kosuke
Shinku, 47(4), p.301 - 307, 2004/04
Recent research results on translational kinetic energy effects of incident oxygen molecules for Si(001) oxidation are summalized and introduced. The variation of surface temperature dependence of SiO desorption yield, oxygen uptake curves, and chemical bonding states depending on translational kinetic energy of oxygen molecules is described concretely. Eapecially, the translational kinetic energy effects on chemical reaction processes of concurrent oxide-layers formation and SiO desorption are discussed.
Takakuwa, Yuji*; Ishizuka, Shinji*; Yoshigoe, Akitaka; Teraoka, Yuden
Kagaku Kogyo, 54(9), p.687 - 692, 2003/09
Real-time in-situ photoemission spectroscopic studies on Ti(0001) oxidation by O
molecules at 473K-673K are reviewed. The Ti(0001) surface was changed from metal to oxide during exposure to oxygen gas. From the time dependent Ti-2p photoemission spectra, time evolution of each oxide component of Ti was clarified.
gas on Si(0 0 1) surface by means of synchrotron radiation Si-2p photoemission spectroscopyYoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden
Applied Surface Science, 216(1-4), p.388 - 394, 2003/06
Times Cited Count：9 Percentile：45.93(Chemistry, Physical)It is well known that the initial Si(0 0 1) oxidation by O gas is an important reaction system because it is usually used to form gate-oxide films on MOSFET. With decreasing the size of ULSI, it is necessary to control the surface reaction with atomic scales. In this study, we report 
observation of thermal oxidation using O gas on Si(0 0 1) surface by means of synchrotron radiation photoemission spectroscopy at the soft x-ray beamline, BL23SU, in the SPring-8. We clarified the chemisorption processes of O on Si(0 0 1) surface over 773K regions at the initial oxidation stages from the results of Si2p core-level shifts. The fundamental understanding of surface reaction is expected to contribute the development of the future nanotechnology.
